Method and device for a dram capacitor having low depletion ratio

ABSTRACT

A method of manufacturing a semiconductor integrated circuit device having low depletion ratio capacitor comprising: forming hemispherical grains (HSG) on a poly-silicon; doping the hemispherical grained polysilicon in a phosphine gas; and rapid thermal oxidizing the doped hemispherical grained polysilicon at 850° C. for 10 seconds. The method further comprises nitridizing the rapid thermal oxidized hemispherical-grained polysilicon and depositing a alumina film on the silicon nitride layer. A semiconductor integrated circuit device having a low depletion ratio capacitor according to the disclosed manufacturing method is provided.

CROSS-REFERENCES TO RELATED APPLICATIONS

This application is a divisional of U.S. patent application Ser. No.13/078,917 filed Apr. 1, 2011, which claims priority to Chinese PatentNo.201010154714.X, filed Apr. 14, 2010, commonly assigned and herebyincorporated by reference in their entirety for all purposes.

BACKGROUND OF THE INVENTION

The present invention is directed to integrated circuits and theirprocessing for the manufacture of semiconductor devices. Moreparticularly, the invention provides a method of manufacturing asemiconductor integrated circuit device including a high surface areacapacitor with a low depletion ratio. Merely as an example, anembodiment provides a method for a semiconductor integrated circuitdevice including a rapid thermal process after phosphorous doping of ahemispherical grained poly-silicon film.

Integrated circuits or “ICs” have evolved from a handful ofinterconnected devices fabricated on a single chip of silicon tomillions of devices. Current ICs provide performance and complexity farbeyond what was originally imagined. In order to achieve improvements incomplexity and circuit density (i.e., the number of devices capable ofbeing packed onto a given chip area), the size of the smallest devicefeature, also known as the device “geometry”, has become smaller witheach generation of ICs. Semiconductor devices are now being fabricatedwith features less than a quarter of a micron across.

Increasing circuit density has not only improved the complexity andperformance of ICs but has also provided lower cost parts to theconsumer. An IC fabrication facility can cost hundreds of millions, oreven billions, of dollars. Each fabrication facility will have a certainthroughput of wafers, and each wafer will have a certain number of ICson it. Therefore, by making the individual devices of an IC smaller,more devices may be fabricated on each wafer, thus increasing the outputof the fabrication facility. Making devices smaller is very challenging,as each process used in IC fabrication has a limit. That is to say, agiven process typically only works down to a certain feature size, andthen either the process or the device layout (“design rules”) needs tobe changed. An example of such a limit is the amount of charge storedwithin a capacitor formed on the surface of a semiconductor device,given the low operating voltage of the semiconductor integrated circuitdevice due to its small geometry. The surface area of the storagedetermines the amount of charge that can be stored on the capacitor.

The manufacturing of integrated circuits involves various processes. Forexample, the processes include, inter alia, wafer growth,photolithography, doping, oxidation, deposition, etc.

Semiconductor devices and circuits are formed in wafers, which serve assubstrates. Generally, single-crystal substrates, which are made from asingle material with crystals formed by atoms all aligned in a specificdirection. The process of waver creation usually involves creating alarge ingot of semiconductor materials, aligning the ingot, removingimpurities, slicing ingot into thin wafers, and polishing the slicedwafers.

Generally, photolithography process is used to define and shape specificareas of the wafer to suit particular design of integrated circuit.Usually, a layout design is used to create an optical mask (or reticlepattern, depending on application). The wafer surface is usually coveredwith a layer of photoresist. The wafer is then exposed to light throughthe optical mask. After light exposure, the areas of photoresist thatwere exposed to light are removed using chemical process. As a result,the wafer contains both clear areas (where photoresist is removed) andareas blocked by photoresist. Next, various processes (such as etching,oxidation, diffusion, etc.) only affecting clear areas are performed.After various process are finished, photoresist materials are thenremoved.

One of the various processes is oxidation, which is used to createinsulating layers. Often, oxide grows on silicon in a wafer to formdielectrics made of SiO₂. One of the method to grow oxide on wafer isexposing wafer to O₂ at high temperatures.

Deposition is another process in semiconductor fabrication. Depositionprovides connections among insulators and interconnecting layers bydepositing various materials. Techniques such as chemical vapordeposition (CVD) and low pressure CVD (LPCVD) are commonly used. Forexample, metals are deposited to provide low resistance interconnects,polysilicon is used as conductor, and dielectric materials are depositedto create insulating layers.

Another process is doping, which changes the electrical properties ofthe wafer. For example, a specific area of the wafer may be doped andbecome n-type or p-type depending upon the doping material andconcentration. There are a few ways to perform doping. One way isimplantation, in which atoms are injected into wafers at high velocity.Another way of doping is through diffusion, in which atoms are diffusedinto selected regions of the wafer at high temperature.

For semiconductor memories of the dynamic random access types, i.e.,“DRAMs,” information is stored by varying the amount of charge withineach capacitor of an array of capacitors formed on the surface of asemiconductor substrate. For example, a bit (binary information) isstored at each capacitor by associating a discharged capacitor statewith a logical zero and a charged capacitor state with a logical one.Reducing the size of a DRAM capacitor with reduced design rules reducesthe surface area of the capacitor plates and therefore has the effect ofreducing the amount of charge stored on the capacitor. In addition, thereduced surface area can degrade capacitor storage performance at lowvoltages.

A capacitor generally consists of two conducting plates placed inparallel separated by an insulator. The plates can be formed by twoelectrodes having a planar, cylindrical, or deep-trench surfaces.Applying a voltage differential to the electrodes charges the capacitor,where the surface of the electrodes will take on equal and oppositecharges. The capacitor is fully charged when the voltage differencebetween the two electrodes is equal to the power supply voltage. If thecapacitor is perfect, it will hold the stored voltage for an infinitetime. Due to the leakage current inherent in a capacitor, the capacitormust be periodically recharged (refreshed) in order to keep the storedbinary information. Therefore, the frequency of recharging (i.e.,refresh rate) depends on the amount of stored charge and the amount ofleakage current in the capacitor.

Conventional capacitor structures have been widely used in integratedcircuit applications, such as DRAM. However, these capacitor structureshave various limitations, some of which are described in more detailbelow.

Therefore, it is desirable to have improved methods of forming asemiconductor capacitor in the manufacturing of integrated circuits.

BRIEF SUMMARY OF THE INVENTION

It has been found that the capacitor value varies depending on thepolarity of the charge voltage. A depletion ratio is defined as thedifference between C+ and C− divided by C+, where C+ is the capacitorvalue when the electrodes are biased with a positive voltage, and C− isthe capacitor value when the electrodes are biased with a negativevoltage. The depletion ratio is thus expressed as:

DR=100*(C+−C−)/C+ or 100*(1−C−/C+)   (1)

In conventional manufacturing methods, the capacitor value at a negativevoltage is much less than the value when the capacitor is biased at apositive voltage. This variation in capacitance values is not desired indevice applications. Additionally, in DRAM applications, various methodshave been proposed to increase the effective capacitor surface areawithout increasing the die size. These methods, includinghemispherical-grain (HSG) silicon, often involve complicated processingand can exacerbate depletion effects in the capacitor. Accordingly, thedepletion ratio of conventional integrated circuit capacitors can berelatively high. In DRAM applications, the variation in capacitance canimpact device performance and, in some cases, frequent charge refreshoperation is required.

The present invention is directed to integrated circuits and theirprocessing for the manufacture of semiconductor devices. Moreparticularly, the invention provides a method of manufacturingsemiconductor integrated circuit devices having at least a low depletionratio capacitor. Merely by way of example, the invention has beenapplied to the DRAM fabrication process having a capacitor depletionratio less than 10. But it would be recognized that the invention has amuch broader range of applicability.

Embodiments of the present invention provide many benefits overconventional techniques. For example, embodiments of the presenttechnique provide an easy to use process that relies upon conventionaltechnology. In some embodiments, a method provides enlargement of thesurface area of the lower electrode using hemispherical grains. Further,the method provides a low depletion ratio, i.e., the capacitor valuevaries within a relatively narrow range where the lower electrode isbiased either positively or negatively relative to the upper electrode.Additionally, the method provides a process that is compatible withconventional process technology without making substantial modificationsto conventional equipment and processes. Depending upon the embodiment,one or more of these benefits may be achieved. These and other benefitswill be described in more detail throughout the present specificationand more particularly below.

According to an embodiment of the present invention, a method includesforming a polysilicon layer on the silicon substrate and forminghemispherical grains (HSG) on the polysilicon layer. The method furtherincludes doping the HSG formed polysilicon in a 200 Torr pressure gasatmosphere containing phosphine (PH₃) at a temperature in the range of600° C. to 700° C. for a time duration of 2 hours. Additionally, themethod includes nitridizing the doped HSG polysilicon and depositing analumina film having a thickness of about 45 Å.

According to another embodiment of the present invention, a methodincludes forming a polysilicon layer on the silicon substrate andforming hemispherical grains (HSG) on the polysilicon layer. The methodfurther includes doping the HSG formed polysilicon in a gas atmospherecontaining a phosphine gas (PH₃) at a designated temperature in therange of 650° C. to 750° C. for a designated time period. In anembodiment, the designated temperature is about 700° C., the pressure isabout 6.5 Torr, and the time period is about 30 minutes. In anotherembodiment, the designated temperature is about 650° C., the pressure isabout 200 Torr, and the time duration is about 120 minutes.

According to yet another embodiment of the present invention, a methodincludes forming a polysilicon layer on the silicon substrate andforming hemispherical grains (HSG) on the polysilicon layer. The methodfurther includes doping the HSG formed polysilicon in a low pressure gasatmosphere containing a phosphine gas (PH₃) at a temperature in therange of 620 ° C. to 680° C. for a time duration about 2 hours. Afterthe doping of HSG-formed polysilicon is performed, a rapid thermaloxidation process is applied to the doped HSG polysilicon at atemperature in the range of 800° C. to 900° C. (preferably about 850°C.) for a time duration of 5 seconds to 15 seconds (preferably 10seconds). And the rapid thermal oxidation process is followed by anitration process to form a Si_(x)O_(y)N_(z) film. An alumina filmhaving a thickness of 45 Å will then be deposited on theSi_(x)O_(y)N_(z) film.

In some embodiments of the present invention, a semiconductor devicehaving a low depletion ratio capacitor includes a surface havinghemispherical-grained silicon for increasing a surface area. In someembodiments, the depletion ratio of the capacitor is below 10. Incertain embodiments, the hemispherical-grained silicon is doped in anatmosphere containing a phosphine gas (PH₃), and a silicon oxide film isformed on the hemispherical-grained silicon through a rapid thermaloxidation process at a temperature in the range of 800° C. to 900° C.(preferably about 850° C.) for a time duration of 5 seconds to 15seconds (preferably 10 seconds). In some embodiments, the semiconductordevice further includes a silicon oxynitride layer Si_(x)O_(y)N, formedon the silicon oxide film. Additionally, an alumina film Al₂O₃ having athickness in the range of 30 Å to 60 Å is deposited on the alumina film.In an embodiment, the alumina film thickness is about 45 Å.

Various additional features and advantages of the present invention canbe more fully appreciated with reference to the detailed description andaccompanying drawings that follow.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a flow chart illustrating methods of manufacturing asemiconductor integrated circuit device according to embodiments of thepresent invention;

FIG. 2 is a cross-sectional illustration of an integrated device havinga hemispherical grain conductor/electrode therein formed in accordancewith the methods shown in FIG. 1;

FIG. 3 is a flow chart illustrating a method for manufacturing asemiconductor integrated circuit device according to another embodimentof the present invention;

FIG. 4 is a cross-sectional illustration of an integrated device havinga hemispherical grain conductor/electrode therein formed in accordancewith the method shown in FIG. 3; and

FIG. 5 is a Table summarizing some experimental results obtained fromthe embodiments illustrated in FIG. 1 to FIG. 4.

DETAILED DESCRIPTION OF THE INVENTION

The present invention will now be described more fully hereinafter withreference to the accompanying drawings, in which embodiments of thepresent invention are shown. This invention may be embodied in differentforms and should not be construed as limited to the embodiments setforth herein. It is noted that the thickness of layers and regions arenot drawn to scale, and exaggerated for clarity. It is also understoodthat when a layer is referred to as being on another layer, it can bedirectly on the other layer, or intervening layers may also be present.

FIG. 1 shows methods of manufacturing a semiconductor integrated circuitdevice according to some embodiments of the present invention. The flowchart of FIG. 1 may be best understood together with FIG. 2, which showsa cross-section of a semiconductor integrated device being manufacturedaccording to methods described in the flow chart illustrated in FIG. 1.In one embodiment of the invention, a silicon substrate 210 is providedat step 110. A conductive layer pattern 220 (e.g., polysilicon) having afirst conductivity type impurity (e.g., n-type) may be formed directlyon the silicon substrate. The polysilicon layer 220 may be the lowerelectrode of a capacitor. Hemispherical grains 230 are formed on thepolysilicon layer to increase the surface area of the conductive layerpattern 220. In one embodiment, the HSG layer 230 may be formed byloading the polysilicon 220 into a reaction chamber and maintaining alow pressure of about 6.5 Torr while simultaneously exposing theconductor layer pattern 220 to a phosphine (PH₃) gas at a temperaturebetween 600° C. to 700° C. (preferably 650° C.) for a time duration ofabout 120 minutes (step 130). In another embodiment, the phosphorousdoping of the HSG-formed polysilicon layer 220 is performed under a PH₃gas pressure of about 200 Torr at a temperature in the range of about620° C. to 680° C. for a time duration of 120 minutes.

After doping of the composite polysilicon pattern layer (including theHSG layer 230 and polysilicon pattern layer 220), a diffusion barrierlayer 240 is formed on the HSG layer 230 at step 140. Here, a nitrogengas is provided to react with the surface of the HSG layer 230 to form asilicon nitrite layer 240. The nitration process may be performed at atemperature between 600° C. and 700° C. (preferably 650° C.) for aduration of 180 minutes. Following the formation of the silicon nitridelayer 240, a dielectric layer 250 is formed on the silicon nitridelayer. In an embodiment, the dielectric layer comprises a highdielectric material such as aluminum oxide Al₂O₃, tantalum oxide Ta₂O₅having a thickness about 45 Å. At step 160, an upper electrode 260 isformed.

As determined by the inventors herein, semiconductor integrated circuitdevices manufactured according to the above described methods provideimproved characteristics in term of the depletion ratio. Experimentalresults are shown in FIG. 5. Column 515 (Conventional) provides measuredvalues obtained in a conventional manufacturing process. Here, the ratiobetween a low capacitor value (when the electrodes are reversed biased)and a high capacitor value (when the electrodes are positively biased)is 0.8065 (26.55 in row 552 divided by 32.92 in row 550) for a depletionratio of 19.35 (row 555) according to Equation (1).

Column 520 (Embodiment 1) shows experimental results according to anembodiment of the present invention described in FIG. 1 and FIG. 2above. Here, the conductor layer pattern 220 and the HSG layer 230 areexposed to a phosphine (PH₃) gas under a pressure of about 200 Torrwhile the process temperature and time duration are about the same as inthe conventional manufacturing method. An improved depletion ratio of13.67 has been obtained comparing with the depletion ratio of 19.35 inthe convention method in spite of a slightly higher leakage current inthe P- (row 560) and N-MOS (row 562) transistors.

Column 525 (Embodiment 2) shows experimental results according toanother embodiment of the present invention described in FIGS. 1 and 2.Here, the polysilicon layer pattern 220 and the HSG layer 230 areexposed to a phosphine (PH₃) gas under a pressure of about 6.5 Tonsimilar to the conventional method while the process temperature isincreased to 700° C. for a time duration of about 30 minutes. It isnoted that the achieved depletion ratio is now around 12.63,significantly lower than that of the conventional method in column 515.It also is noted that the leakage current of the P- and N-MOStransistors are also significantly lower than those obtained in theconventional method. And the breakdown voltage (row 570) is alsoslightly better than that of the conventional method.

Shown in FIG. 3 is a flow chart according to still another embodiment ofthe present invention. In this embodiment, a rapid thermal oxidation(RTO) will be performed on the HSG-formed polysilicon before thenitration step in order to further improve the depletion ratio. In someembodiments, the RTO steps provides a control thermal oxide formation topacify the surface of the HSG-formed polysilicon without causingsubstantial dopant redistribution. The flow chart shown in FIG. 3 isdescribed together with the associated cross-sectional illustrationshown in FIG. 4.

At step 310, a silicon substrate 410 is provided. A conductive layerpattern 420 (e.g., polysilicon) having a first conductivity typeimpurity (e.g., n-type) may be formed directly on the silicon substrate.In an embodiment, the first conductivity type impurity is phosphor. Thepolysilicon layer 420 may be the lower electrode of a capacitor.Hemispherical grains 430 are formed on the polysilicon layer to increasethe surface area. Phosphorous doping is performed on the hemisphericalgrains at step 330. In one embodiment, the phosphorous doping may beperformed by loading the composite polysilicon 420 includinghemispherical grains 430 into a reaction chamber and maintaining a lowpressure of about 6.5 Torr containing a phosphine (PH₃) gas at atemperature between 600° C. to 700° C. (preferably 650° C.) for a timeduration of about 120 minutes. Following the PH₃ annealing, a rapidthermal oxidation is performed on the phosphor-doped and HGS-formedpolysilicon at step 340. The RTO process at step 340 can be performed ata temperature ranging from 800° C. and 900° C. for a time period between6 seconds to 15 seconds. In a preferred embodiment, the RTO step 340 isperformed in a heated chamber filled with about 8% O₂ at a temperatureof 850° C. for 10 seconds to form a silicon oxide layer on the HGSpolysilicon.

At step 350, the HGS-formed polysilicon having a silicon oxide layer 440is submitted to an inert gas such as nitrogen for a time duration of 180minutes at a temperature in the range between 600° C. and 700 C. Asilicon oxynitride layer 450 of Si_(x)O_(y)N, is then formed on thephosperous-doped HSG-formed polysilicon. Following the HSG nitridationstep 350, a dielectric layer 460 is formed on the silicon oxynitridelayer 450 at step 360. In an embodiment, the dielectric layer comprisesa high dielectric material such as aluminum oxide Al₂O₃, tantalum oxideTa₂O₅ having a thickness about 45 Å. In en embodiment, the thickness ofthe Al₂O₃ is about 45 Å. At step 370, an upper electrode 470 is formedon the dielectric layer 460.

As it can be seen in the experimental results shown in FIG. 5, theadditional rapid thermal oxidation step inserted between the HSG-dopingwith a phosphine (PH₃) gas and the nitridation improves the depletionratio of the capacitor and the leakage current of the MOS transistors.The measured capacitor value with a positive biased voltage (e.g., thelower electrode is at 0V, and a positive voltage is applied to the upperelectrode) is 35.75 pF, i.e., higher than the capacitor valuemanufactured with the conventional method. The capacitor value is evenhigher when the capacitor is reversed biased (the lower electrode atground potential, and a negative voltage is applied to the upperelectrode) when comparing with the value obtained with the capacitormanufactured with the conventional method. For example, the capacitorvalue of conventional device is 26.55 pF (row 552, column 515), and thecapacitor value of Embodiment 3 is 32.75 pF (row 552, column 530 in FIG.5). Because the difference in capacitor values between the positive andnegative biased capacitor is small in the present invention, a muchsmall depletion ratio is obtained. According to FIG. 5, the positivebiased capacitor value CAP-H is 35.75 (row 550, column 530) and thenegative biased value CAP-L is 32.75 (row 560, column 530), the ratioCAP-H/CAP-L is about 0.9155, and the depletion ratio is 8.43 (row 555,column 530) according to Equation (1). When compared with the depletionratio of 19.35 of the conventional art, the depletion ratio ofEmbodiment 3 of the present invention shows significant improvement. Itis further observed that the leakage currents of the manufactured P- andN-MOS transistors according to Embodiment 3 of the present invention arealso significant lower than those of the convention art (rows 560, 570and column 530 of FIG. 5). Additionally, the breakdown voltage (row 570)is higher than that of the conventional method.

It will be understood that the examples and embodiments described hereinare for illustrative purposes only and that various modifications orchanges can be made without departing from the spirit of the presentinvention. For example, the polysilicon layer may take on other shapesrather than planar. In order to increase the surface area, thepolysilicon layer may include a trench or a cylinder, or the polysiliconlayer may be formed pn a surface of a silicon pillar

Those skilled in the art will recognize that the embodiments describedin the specification may be altered and modified without departing fromthe spirit and scope of the invention as defined in the followingclaims.

What is claimed is:
 1. A semiconductor device comprising a low depletionratio capacitor having a hemispherical-grained silicon as an electrode;wherein the low depletion ratio is below
 10. 2. The semiconductor deviceof claim 1 wherein: the hemispherical-grained silicon is doped at atemperature of about 650° C. for a time period of about 120 minutes in agas atmosphere containing a phosphine (PH₃) gas; the dopedhemispherical-grained silicon is oxidized in a rapid thermal process(RTP) to obtain a silicon oxide film; the RTP treated and dopedhemispherical-grained silicon is further processed in a gas atmospherecontaining nitrogen at a temperature of about 650 degree C. for aboutthree hours to form a Si_(x)O_(y)N_(z) layer; and an alumina film isdeposited on the Si_(x)O_(y)N_(z) layer.
 3. The semiconductor device ofclaim 1 wherein the surface is planar.
 4. The semiconductor device ofclaim 1 wherein the surface comprises a trench.
 5. The semiconductordevice of claim 1 wherein the rapid thermal oxidation process isperformed at a temperature about 850 C for a time period of about 10seconds.